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| Semiconductor SHE145PGHE(B) Oval Type High Efficiency LED Lamp Features * * * * * * * Green Colored diffusion lens type Ellipse type(X=4.6mm, Y=5.8mm) Ultra luminosity Flangeless package High power LEDs Oval shape View Angle : 70 / 34 * E ; ESD Protected (2.0KV, 3 times @100pF, 1.5K) Application * Full color displays * Message boards * Variable message signs(VMS) Outline Dimensions unit : mm 4.40 ~ 4.80 5.50~6.00 7.50 ~ 7.90 1.20 Min. 3.10~4.10 1.27 Typ. 0.55 Max. 22.00 Min. 1.00 Min. 2.54 Typ. 0.55 Max. PIN Connections 1. Anode 2. Cathode KSD-O3D006-000 1 SHE145PGHE(B) Absolute Maximum Ratings Characteristic Power dissipation Forward current * Peak forward current Operating temperature range Storage temperature range 2 1 (Ta=25oC) Symbol PD IF IFP Topr Tstg Rating 150 40 65 -3085 -30100 Unit mW mA mA * Soldering temperature Tsol 260 for 10 seconds *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Recommend document -. LED is very sensitive to ESD. Electrical / Optical Characteristics Characteristic Forward voltage *4Luminous intensity Dominant wavelength Spectrum bandwidth *3Half angle (Ta=25oC) Symbol VF IV Test Condition IF= 20mA IF= 20mA IF= 20mA IF= 20mA Min. Typ. Max. 780 515 3.2 522 30 17 35 3.8 2640 530 - Unit V mcd nm nm deg D 1/2 X Y IF= 20mA *3. 1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity *4. Luminous intensity maximum tolerance for each grade classification limit is 18% *4. Luminous Intensity Classification Q 780~1170 R1 1170~1450 R2 1450~1760 S1 1760~2100 S2 2100~2640 (Do not use to combine grade classification. It must be used separately grade classification) KSD-O3D006-000 2 SHE145PGHE(B) Characteristic Diagrams Fig. 1 IF - VF Fig. 2 IV - IF Luminous Intensity Iv [mcd] Forward Current IF [mA] Forward Voltage VF [V] Forward Current IF [mA] Fig. 3 IF - Ta Fig.4 Spectrum Distribution Current IF [mA] Forward Relative Intensity [%] Ambient Temperature Ta [] Wavelength [nm] Fig. 5-1 Radiation Diagram(X) Fig. 5-2 Radiation Diagram(Y) Relative Luminous Intensity Iv [%] Relative Luminous Intensity Iv [%] KSD-O3D006-000 3 1. ESD(Electro Static Discharge) : Chip Al2o3 (Sapphire: ) Chip Damage VF Down 2. ESD 2-1. ESD (Electro Static Discharge) : (+) (-) ( , , , ) (-) (+) (+) (-) . : , , , , , : , , , , : , . 2-2. -. . 80% . (10%~20%) (65%~90%) Table 6[KV] 0.1[KV] 7[KV] 0.6[KV] 20[KV] 1.2[KV] -. -. : Wrist Strap ( ), Heel Grounder, , , , -. Conveyer Table : Conductive Floor Mat ESD . KSD-O3D006-000 4 SHE145PGHE(B) The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-O3D006-000 5 |
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